Capture and emission kinetics of individual Si:SiO2 interface states
- 12 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (19) , 1270-1272
- https://doi.org/10.1063/1.97000
Abstract
By studying the random telegraph signals in the drain current of small area metal-oxide-semiconductor field-effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap energy levels are temperature dependent as a result of entropy changes on trap ionization.Keywords
This publication has 8 references indexed in Scilit:
- 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984
- Energy concepts of insulator–semiconductor interface trapsJournal of Applied Physics, 1983
- Standardized terminology for oxide charges associated with thermally oxidized siliconIEEE Transactions on Electron Devices, 1980
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Entropy of ionization and temperature variation of ionization levels of defects in semiconductorsPhysical Review B, 1976
- Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gapsPhysical Review B, 1976
- Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)IEEE Transactions on Electron Devices, 1965