Experimental evidence for chiral melting of the Ge(113) and Si(113) 3×1 surface phases

Abstract
Results of a spot-profile-analysis low-energy-electron-diffraction study of the 3×1 order-disorder phase transition of the Ge(113) and Si(113) surfaces are reported. For Ge(113) agreement with predictions for chiral melting with isotropic scaling is found. For Si(113) we compare our findings to those of other LEED and x-ray-scattering studies.