Properties of Microstrip Line on Si-SiO/sub 2/ System

1 November 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques

Vol. 19 (11) , 869-881
https://doi.org/10.1109/tmtt.1971.1127658

Abstract

A parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment. The experiment has been performed over wide ranges of frequency, substrate resistivity, and strip width. Existence of three types of fundamental modes is concluded and the condition for the appearance of each mode is clarified. In particular, the slow-wave mode is found to propagate within the resistivity-frequency range suited to the monolithic circuit technology, and its propagation mechanism is discussed. Approximate analysis of the fringing effect is also made for the slow-wave mode.

Keywords

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