A New Ultrasonic Amplifier Device of CdS Crystal with Integrated Diffusion-Layer Transducers

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Abstract
It has been accomplished to embed a pair of CdS diffusion-layer transducers in a photoconductive CdS crystal for ultrasonic amplification. That is, a pair of transducer layers and conductive layers, and an amplifying part are integrated in a single piece of CdS crystal. The conductive layers are formed by heating the crystal in cadmium vapor, and they act as both a pair of electrodes for applying drift field voltage and the electrodes for transducer layers. A fabricated sample shows that the effective resistance of the conductive layer, which is considered to be in series with the equivalent electric impedance of the transducer, is lower than the impedance of the transducer itself. Upon application of the drift field, ultrasonic wave was amplified by 35 dB at 54 Mc compared with that of no drift field.

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