Efficient light emission by impact ionization in single-barrier tunneling devices
- 22 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (21) , 2124-2126
- https://doi.org/10.1063/1.101147
Abstract
Efficient band-gap electroluminescence has been observed in n+-n−-n+ single-barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field dependence of the impact ionization rate is determined. Comparisons to theory are made.Keywords
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