InGaAs/InAlAs heterojunction Schottky transistors grown by MBE

25 September 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (20) , 1088-1089
https://doi.org/10.1049/el:19860746

Abstract

Heterojunction bipolar transistors incorporating a Schottky collector have been fabricated in In_0.53Ga_0.47As/In_0.52Al_0.48As grown by molecular beam epitaxy. Devices show very high emitter-base junction saturation current densities, low offset voltages and current gain greater than unity (≃2.5) in spite of the fact that no attempt was made to isolate the extrinsic base-emitter junction.

Keywords

EMITTER-BASE JUNCTION SATURATION CURRENT DENSITIES
INGAAS-INALAS
HJBT
INGAAS/INALAS HETEROJUNCTION SCHOTTKY TRANSISTORS
MOLECULAR BEAM EPITAXY
OFFSET VOLTAGES
BIPOLAR TRANSISTORS
SCHOTTKY COLLECTOR
CURRENT GAIN
EXTRINSIC BASE-EMITTER JUNCTION

This publication has 0 references indexed in Scilit: