High-temperature silicon diode models
- 1 January 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (1) , 103-111
- https://doi.org/10.1016/0038-1101(92)90311-y
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971
- Transition region capacitance of diffused p-n junctionsIEEE Transactions on Electron Devices, 1971