Two-band conduction of amorphous silicon nitride
- 16 December 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 26 (2) , 489-495
- https://doi.org/10.1002/pssa.2210260211
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applicationsProceedings of the IEEE, 1970
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia ReactionJournal of the Electrochemical Society, 1968
- Electrical Properties of Vapor-Deposited Silicon Nitride and Silicon Oxide Films on SiliconJournal of the Electrochemical Society, 1968
- The structure of amorphous silicon nitride filmsPhysica Status Solidi (b), 1968