Epitaxial growth of B a T i O3 thin films at 600 °C by metalorganic chemical vapor deposition
- 22 May 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (21) , 2801-2803
- https://doi.org/10.1063/1.113480
Abstract
BaTiO3 thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO3 films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with an a‐axis perpendicular to the substrate plane. Nanoscale energy dispersive x‐ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate.Keywords
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