Radiation effects on radiation hardened LDD CMOS transistors
- 1 January 1993
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 285 (1) , 362-365
- https://doi.org/10.1063/1.44667
Abstract
Here we report on noise measurements from MOSTs through irradiations performed in a Co‐60 gamma cell up to a total dose of 300 krad(SiO2). We found that the noise in MOS transistors can be associated with channel and series resistance due to LDD structure. No change in 1/f noise level is observed when measurements are performed under constant effective gate voltage after irradiation. Nevertheless an increase in noise can reveal particular defects due to radiation damages.Keywords
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