Improved luminescence from InGaAsP/InP MQW active regions using a wafer fused superlattice barrier
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
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T
o
of 132 K at room temperatureElectronics Letters, 1998
- Defect reduction in ZnMgSSe epilayers on GaAs by using ZnMgSe/ZnSSe strained-layer superlatticesSolid State Communications, 1996
- An Optical Study of Interdiffusion in Strained InP-Based HeterostructuresJapanese Journal of Applied Physics, 1995