Linewidth rebroadening in semiconductor lasers due to lateral spatial holeburning
- 5 December 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (25) , 2301-2302
- https://doi.org/10.1049/el:19911425
Abstract
The linewidth of semiconductor lasers is calculated taking into account a transversely inhomogeneous carrier distribution within the active region which gives an additional contribution to laser linewidth if the material linewidth enhancement factor is carrier density-dependent. For the first time it is theoretically shown that lateral spatial holeburning causes linewidth rebroadening in BH DFB lasers at high output power.Keywords
This publication has 1 reference indexed in Scilit:
- Recent progress in narrow-linewidth ingaasp laser diodes and diode laser amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990