Chemical Origin of the Grain Boundary Carrier Recombination in Silicon Bicrystals

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Abstract
The minority carrier recombination related to grain boundaries is studied by the SEM/EBIC technique. The specimens investigated are silicon bicrystals obtained by the Czochralski pulling process. The specimens are heated for 2 hours at 750°C in a neutral atmosphere. Heterogeneous recombination of the grain boundaries is then observed.X-Ray topography and Transmission Electron Microscopy (TEM) have been performed to determine the origin of the heterogeneous recombination. A direct relationship between the local recombination along the grain boundary and the precipitates localized at the interface has been established. The chemical origin of the precipitates is discussed.