Single crystal growth of ZnS by the method of gas source MBE
- 1 August 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (2) , 440-448
- https://doi.org/10.1016/0022-0248(86)90391-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Hydrogen sulphide doping of GaAs and AlxGa1?xAs grown by molecular beam epitaxy (MBE)Applied Physics A, 1985
- Luminescence properties of iodine doped cubic ZnS crystals and the effect of ion implantation of N, P and AgJournal of Crystal Growth, 1982
- On the use of AsH3 in the molecular beam epitaxial growth of GaAsApplied Physics Letters, 1981
- Molecular beam epitaxy of zinc chalcogenidesJournal of Crystal Growth, 1981
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980
- Vapour growth and defect characterisation of large single crystals of ZnS and Zn(Se, Se)Journal of Crystal Growth, 1979
- Growth of cubic ZnS, ZnSe and ZnS Se1-single crystals by iodine transportJournal of Crystal Growth, 1979
- Injection electroluminescence in forward-biased ZnS metal–semiconductor diodesPhysica Status Solidi (a), 1977
- Low-voltage tunnel-injection blue electroluminescence in ZnS MIS diodesJournal of Applied Physics, 1976
- ZnS blue-light-emitting diodes with an external quantum efficiency of 5×10−4Applied Physics Letters, 1975