Behaviour of the charge carriers in slowly varying random field and semiphenomenological approach to the theory of electronic processes in disordered systems
- 30 April 1970
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 4, 410-416
- https://doi.org/10.1016/0022-3093(70)90069-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Interband optical transitions in disordered systems with slowly varying random fieldOptics Communications, 1969
- On the theory of light absorption at interband transitions in heavily doped semiconductorsOptics Communications, 1969
- Perturbation-Moment Method: Application to Band Structure of Impure SemiconductorsPhysical Review B, 1963
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963