Electrical properties of thermal oxide grown on n-type 6H-silicon carbide

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Abstract
Measurement of current conduction in the metal/thermal oxide/n‐type 6H‐silicon carbide is reported. The thermal oxides were grown on nitrogen‐doped n‐type 6H‐silicon carbide at 1275 °C in a dry oxygen ambient. Analysis indicates a Fowler–Nordheim type current conduction mechanism with a barrier height of 2.7 eV between silicon carbide and oxide. Using this value an electron affinity of 3.7–3.8 eV was determined for the Si face of 6H‐silicon carbide. The breakdown field strength for the oxides grown on n‐type 6H‐silicon carbide was 10 MV/cm which is comparable to the breakdown field strength of thermal oxides grown on silicon. Capacitance‐voltage measurements indicated that the interface between n‐type silicon carbide and the thermally grown oxide has a low (5×1010 cm−2 eV−1) interface trap density (Dit). The effective charge density in the oxide was estimated to be 1×1011 cm−2. These measurements indicate that the quality of oxides thermally grown on 6H‐silicon carbide is comparable to those grown on silicon.