Temperature-dependent photoemission study of the HgTe–CdTe valence-band discontinuity
- 1 March 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 7 (2) , 427-430
- https://doi.org/10.1116/1.576197
Abstract
We have studied the temperature dependence of the CdTe–HgTe valence-band discontinuity with x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The samples have been cooled at 110 K for the XPS experiments and at 50 K for UPS. At room temperature, we measure a valence-band discontinuity of 0.35±0.05 eV, in agreement with previous photoemission results. The valence-band discontinuity is found to change by only a few millivolts between room temperature and 50 K, with an estimated uncertainty of ∼60 meV.Keywords
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