Fermi level-dependent defect formation at Cu(In,Ga)Se2 interfaces
- 7 September 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 166 (1-4) , 508-512
- https://doi.org/10.1016/s0169-4332(00)00484-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductorsApplied Physics Letters, 1999
- Band offsets at the ZnSe/CuGaSe2(001) heterointerfaceApplied Physics Letters, 1999
- Prospects of wide-gap chalcopyrites for thin film photovoltaic modulesSolar Energy Materials and Solar Cells, 1997
- Partial density of states in the CuInSe2 valence bandsJournal of Applied Physics, 1997
- Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystalsApplied Physics Letters, 1997
- Chemical interaction of Na with cleaved (011) surfaces of CuInSe2Journal of Applied Physics, 1996
- Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gapJournal of Applied Physics, 1996
- Solar Cells Based on CuInSe2 and Related Compounds: Material and Device Properties and ProcessingProgress In Photovoltaics, 1995
- Formation and electronic properties of the CdS/CuInSe2 (011) heterointerface studied by synchrotron-induced photoemissionJournal of Applied Physics, 1995
- CuInSe2 for photovoltaic applicationsJournal of Applied Physics, 1991