VALUE D0Z* FOR GRAIN BOUNDARY ELECTROMIGRATION IN ALUMINUM FILMS
- 1 January 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (1) , 27-29
- https://doi.org/10.1063/1.1653018
Abstract
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10−2. Generalized curves are provided for (v̄i/j)T against T−1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size.Keywords
This publication has 5 references indexed in Scilit:
- Electromigration in Thin Al FilmsJournal of Applied Physics, 1969
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968
- Current-induced mass transport in aluminumJournal of Physics and Chemistry of Solids, 1964
- Self-diffusivity of silver in twist boundariesActa Metallurgica, 1963
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961