Tem Of Dislocations Under High Stress In Germanium And Doped Silicon
- 1 January 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (1) , 13-21
- https://doi.org/10.1111/j.1365-2818.1980.tb00241.x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Investigation of dislocation geometries in the diamond cubic structureJournal of Microscopy, 1973
- Dissociated dislocations in GermaniumPhysica Status Solidi (a), 1973
- The dissociation of dislocations in siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958