Peaked structure appearing in the field effect mobility of silicon MOS devices at temperatures above 20K
- 7 October 1974
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 7 (19) , L356-L361
- https://doi.org/10.1088/0022-3719/7/19/002
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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