Plasma‐Enhanced Chemical Vapor Deposition of TiN from TiCl4 / N 2 / H 2 Gas Mixtures

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Abstract
Thin films of have been deposited on thermally grown using plasma‐enhanced chemical vapor deposition. The films were obtained from gas mixtures of at a total pressure of 1.1 torr and input power density of 5W/cm2at 13.56 MHz. Auger spectroscopy, x‐ray diffractometry, and electrical resistivity measurements were employed to characterize the films as a function of the substrate temperature and gas flow rates. It was found that while hydrogen is necessary for deposition to occur, too much hydrogen increases the chlorine content and resistivity of the film. On the other hand, increasing the nitrogen flow rate reduces the chlorine content and resistivity of the film with the end result being that low resistivity highly oriented polycrystalline films can be deposited at a substrate temperature of 500°C.

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