Abstract
We have observed H+ and F+ yields as a function of low-energy (10-100 eV) electron bombardment from thin films of solid nonafluoroisobutane [(CF3)3CH], 1,2,3,5-tetrafluorobenzene (C6 H2 F4), 1-fluorobutane (C4 H9F), and fluorocyclohexane (C6 H11F). For the materials with separate H and F bonding sites [C6 H2 F4 and (CF3)3CH], H+ and F+ have different appearance potentials, corresponding, respectively, to excitations of the C 2s and F 2s levels (~25 and ~40 eV). For the materials with common H and F bonding sites, the H+ and F+ appearance potentials correspond to excitation of the C 2s level. The F+ threshold is relatively weak, and a steep increase in the F+ yield is observed near 40 eV (F 2s excitation). These results indicate that the final-state excitations leading to ion desorption in these systems are localized within functional groups but not necessarily within individual C-H or C-F bonds of the functional group.