Simulation of the early stages of thin film growth
- 1 August 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (8) , 1038-1045
- https://doi.org/10.1088/0268-1242/12/8/018
Abstract
To gain a better understanding of the silicon oxidation process, we perform numerical simulation of thermal thin-film growth. It is shown that the oxidation rate in the early stages of growth is governed by two processes: the rapid initial formation of the oxidation front and its subsequent diffusion. The resulting oxidation rate provides a rather good description of the experimental data with the minimum number of variable parameters, suggesting that the effect of external parameters (such as temperature and pressure) can be explained in terms of scaling concepts. The results of the simulation are also in agreement with the fitting of experimental data to a power law (where is the measured film thickness and t the oxidation time) predicted by a simple model for thin film growth.Keywords
This publication has 9 references indexed in Scilit:
- Growth kinetics of thermal SiO2thin filmsSemiconductor Science and Technology, 1995
- Fractal aspects related to the Si oxidation processPhysical Review B, 1995
- Oxide growth at a Si surface and role of radiation effectsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- Silicon Valley, What Next?MRS Bulletin, 1993
- A new model for the thermal oxidation kinetics of siliconJournal of Electronic Materials, 1988
- The modelling of silicon oxidation from 1 × 10−5 to 20 atmospheresJournal of Electronic Materials, 1987
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Equation of State Calculations by Fast Computing MachinesThe Journal of Chemical Physics, 1953