Ruthenium Oxide Film Electrodes Prepared at Low Temperatures for Electrochemical Capacitors
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 148 (8) , A833-A837
- https://doi.org/10.1149/1.1379739
Abstract
Ruthenium oxide films were grown on metal substrates at temperatures from 100 to 300°C using a ruthenium ethoxide solution as the precursor. The amorphous phase and highly porous ruthenium oxide films were formed at temperatures of 200°C and lower. A specific capacitance of 593 F/g and an interfacial capacitance of 4 F/cm2F/cm2 were measured from a single-cell capacitor made with ruthenium oxide film electrodes prepared at 200°C. The specific capacitance as a function of temperature and film thickness was studied. A comparison of the surface morphology and electrochemical properties for ruthenium oxide film electrodes made by the ruthenium ethoxide precursor and the ruthenium chloride precursor was also made. © 2001 The Electrochemical Society. All rights reserved.Keywords
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