AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity
- 24 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (4) , 463-465
- https://doi.org/10.1063/1.127059
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Low-loss Al-free waveguides for unipolar semiconductor lasersApplied Physics Letters, 1999
- Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinkingIEEE Photonics Technology Letters, 1999
- High peak power (1.1 W) (Al)GaAs quantum cascadelaser emitting at 9.7 µmElectronics Letters, 1999
- GaAs/Al x Ga 1−x As quantum cascade lasersApplied Physics Letters, 1998
- Long wavelength infrared (λ≂11 μm) quantum cascade lasersApplied Physics Letters, 1996
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Quantum cascade laser: Temperature dependence of the performance characteristics and high T0 operationApplied Physics Letters, 1994
- Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wellsPhysical Review B, 1994
- Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAs structure by varying GaAs well thicknessApplied Physics Letters, 1993
- Dielectric continuum model and Fröhlich interaction in superlatticesPhysical Review B, 1988