One-dimensional analysis of reverse recovery and dv/dt triggering characteristics for a thyristor
- 1 March 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (3) , 596-602
- https://doi.org/10.1109/T-ED.1980.19905
Abstract
Reverse recovery anddv/dttriggering characteristics of a thyristor are analyzed using a one-dimensional numerical model, which consists of the solutions of the full set of semiconductor device equations, including the effect of the shorted emitter. The calculated waveforms of the anode voltage and current are in good agreement with the experimental ones. The reverse recovery characteristic is discussed for the case of an inductive load, and the dependence of capacitive and resistive components of the space-charge region on residual carriers in the n base is discussed on the basis of carrier distributions. Also, the role of the shorted emitter ondv/dttriggering is investigated in connection with the rates of supply and removal of carriers in the p base. It is shown that the shorted emitter improvesdv/dtcapability by causing not only a reduction in the injection efficiency of the n emitter, but also rapid turn-off of the n-p-n transistor section of a thyristor.Keywords
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