Defect- Impurity Interaction in Irradiated n-GaAs
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The Selective Trapping of Arsenic Interstitial Atoms by Impurities in Gallium ArsenidePhysica Status Solidi (b), 1989
- The stability of Frenkel pairs and group V interstitials in electron-irradiated GaAs and GaPSemiconductor Science and Technology, 1987
- Site switching of silicon in neutron-irradiated and annealed gallium arsenide by vacancy migrationJournal of Physics C: Solid State Physics, 1986
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985