The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: II . Model and Discussion

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Abstract
A model is presented to describe the dissolution of in solutions, both in the dark and under illumination. The etching kinetics are shown to be mainly determined by the mechanism of CrVI reduction at . An essential feature of the model is the formation of an adsorbed mixed‐valence chromium complex which passivates the semiconductor surface. A novel reaction between the adsorbed complex and a surface‐state intermediate of the oxidation reaction is proposed to account for the many surprising aspects of the etching and electrochemical kinetics.