High coupled power 1.3 μm edge-emitting light-emitting diode with a rear window and an integrated absorber
- 26 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (13) , 1138-1140
- https://doi.org/10.1063/1.100037
Abstract
An InGaAsP edge-emitting light-emitting diode with a rear window and an integrated absorber is developed. Over 220 μW of coupled power is achieved, for the first time, without the use of antireflection front facet coating. Even at low ambient temperature of −40 °C the stimulated emission is well suppressed.Keywords
This publication has 2 references indexed in Scilit:
- High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorberApplied Physics Letters, 1987
- 1.3 μm edge-emitting diodes launching 250 μW into a single-mode fibre at 100 mAElectronics Letters, 1985