Light ion irradiation experiments suggest an ionization damage mechanism for silicon

1 January 1974

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 21 (2) , 135-136
https://doi.org/10.1080/10420157408230821

Abstract

In studies of ion-irradiation effects in silicon it has been usually assumed that initial elastic ion-atom collisions are responsible for defect production. Our results for light-ion irradiation of silicon suggest that inelastic, ionization effects can be important.

Keywords

SILICON
DAMAGE MECHANISM
LIGHT ION
EXPERIMENTS SUGGEST
ION IRRADIATION
IRRADIATION EXPERIMENTS
IONIZATION DAMAGE

This publication has 2 references indexed in Scilit:

Inner-Shell Ionizations by Proton Impact
Physical Review A, 1970
The Displacement of Atoms in Solids by Radiation
Reports on Progress in Physics, 1955