Interface impurities of low-temperature (900 °C) deposited Si epitaxial films prepared by HF treatments
- 13 August 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (7) , 676-677
- https://doi.org/10.1063/1.103588
Abstract
Impurities at the interfaces of HF‐treated Si (100) substrates and Si films prepared by low‐temperature (900 °C) chemical vapor deposition using SiH2 Cl2 were measured by secondary‐ion mass spectroscopy. Si substrates were prepared by 49% HF, 5% HF, and 0.05% HF acid solutions and loaded into the growth chamber without a water rinse. Carbon, fluorine, oxygen and chlorine were detected at the interfaces for 49% HF and 0.05% HF treated substrates, but they were not detected for 5% HF‐treated samples. Desorption of the contaminants appeared to be sensitively related to a difference in chemical states of the HF‐treated surfaces.Keywords
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