Emitter degradation in quantum dot intermediate band solar cells
- 4 June 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (23) , 233510
- https://doi.org/10.1063/1.2747195
Abstract
The characteristics of intermediate band solar cells containing 10, 20, and 50 InAs quantum dot (QD) layers embedded in otherwise “standard” (Al,Ga)As solar cell structures have been compared. The short-circuit current densities of the cells decreased and the quantum efficiencies of the devices showed a concomitant reduction in the minority carrier lifetime in the p emitters with increasing number of QD layers. Dislocations threading up from the QDs toward the surface of the cells, and revealed by bright field scanning transmission electron microscopy, are the most likely cause of the deterioration in the electrical performance of the cells.Keywords
This publication has 8 references indexed in Scilit:
- Intermediate bands versus levels in non-radiative recombinationPhysica B: Condensed Matter, 2006
- Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate bandJournal of Applied Physics, 2006
- Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cellsApplied Physics Letters, 2005
- General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescenceJournal of Applied Physics, 2004
- Next Generation PhotovoltaicsPublished by Taylor & Francis ,2003
- A metallic intermediate band high efficiency solar cellProgress In Photovoltaics, 2001
- Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate LevelsPhysical Review Letters, 1997
- Spectral solar irradiance data sets for selected terrestrial conditionsSolar Cells, 1985