GaAs/AlGaAs multiple quantum well optical modulator using multilayer reflector stack grown on Si substrate

20 July 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (15) , 995-996
https://doi.org/10.1049/el:19890665

Abstract

We report the first pin multiple quantum well reflection modulator grown on Si with a quarter-wave stack dielectric mirror. The structures demonstrated were grown by MBE, with a 75 period MQW, and achieved a relative change in reflectivity of 31% with 8 V applied bias at 865 nm. The absolute change in reflectivity was 17%.

Keywords

QUARTER-WAVE STACK DIELECTRIC MIRROR
GAAS ON SI
MQW
CHANGE IN REFLECTIVITY
MBE
OPTICAL MODULATOR
BIAS
PIN MULTIPLE QUANTUM WELL REFLECTION MODULATOR
GAAS-SI
SI SUBSTRATE
P-I-N STRUCTURE
865 NM
8 V
GAAS-ALGAAS
MULTIPLE QUANTUM WELL
SEMICONDUCTORS
MULTILAYER REFLECTOR STACK

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