Effect of long-term stress on IGFET degradations due to hot electron trapping
- 1 August 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (8) , 923-928
- https://doi.org/10.1109/T-ED.1981.20460
Abstract
The threshold voltage shift through the long-term stress is measured for IGFET's. The gate bias dependence shows that the hot electron trapping is affected strongly by the electric field in the gate insulator. The threshold voltage shift versus time is well explained with the theory modified by the effect of the trapped charge on the subsequent electron trapping. The effect of transistor dimensions and temperature are also discussed.Keywords
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