Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1) , 83-86
- https://doi.org/10.1016/0921-5107(89)90221-3
Abstract
No abstract availableKeywords
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