Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 1181-1184
• https://doi.org/10.4028/www.scientific.net/msf.264-268.1181

Abstract

Keywords

• AMMONIA
• GAS SOURCE MOLECULAR BEAM EPITAXY
• SURFACE RECONSTRUCTION
• THIN FILM