Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace

5 August 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (16) , 694-695
https://doi.org/10.1049/el:19820472

Abstract

An imaging furnace equipped with a 6.5 kW Xe arc lamp has been used to anneal 4 in. arsenic-implanted silicon wafers in a single exposure. Electrical and structural investigations have shown complete activation without appreciable diffusion of the impurities, and the regrown layers are defect free for low implant dose (5×10¹⁴/cm², 100 keV); for high implant dose (10¹⁵/cm², 200 keV), however, dislocation loops are observed.

Keywords

AS IMPLANTED SI WAFER
DISLOCATION LOOPS
DOPANT ACTIVATION
FAST ANNEALING
SI:AS
IMAGING FURNACE
STRUCTURAL INVESTIGATIONS
4 IN SI WAFER
REGROWN LAYERS
6.5 KW XE ARC LAMP
ION IMPLANTATION
SEMICONDUCTOR

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