Recovery Currents in Germanium p — n Junction Diodes
- 1 October 1953
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 24 (10) , 1267-1272
- https://doi.org/10.1063/1.1721146
Abstract
When a germanium p — n junction biased in the forward direction has a reverse voltage suddenly applied, a large transient current flows during the ``recovery time.'' A proposed mechanism for this current involving diffusion of stored minority carriers to the barrier is compared with experimental results. Since the current is related to the diode forward direction characteristics these are examined. Finally a variable time delay utilizing the recovery current effect is discussed.This publication has 1 reference indexed in Scilit:
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949