Theoretical calculation of the normal-state resistivity of the high-Tcoxide materials

We calculate the resistivity of a two-dimensional electron gas, which is relevant to the high-$T_c$ oxide materials, based upon the electron-phonon scattering mechanism and considering temperature effects of the chemical potential due to the small carrier density. The calculated results show that the resistivity $\rho$ is nearly linear, and its slope $\frac{d\rho }{\mathrm{dT}}$ is a slowly varying function of the temperature rather than a constant. By using sets of parameters extracted from the experimental data for Y-Ba-Cu-O and La-Sr-Cu-O and choosing reasonable electron-phonon coupling parameters ($\lambda =0.2\mathrm{} \mathrm{and} 1.3$, respectively, for Y-Ba-Cu-O and La-Sr-Cu-O), the obtained results for $\rho$ and $\frac{d\rho }{\mathrm{dT}}$ can be quantitatively compared with experimental measurements.