In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emission
- 30 November 1972
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 33 (2) , 422-426
- https://doi.org/10.1016/0039-6028(72)90220-8
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Ion-Implanted Phosphorous in Silicon: Profiles Using C-V AnalysisJournal of Applied Physics, 1971
- Annealing characteristics of highly doped ion implanted phosphorus layers in siliconRadiation Effects, 1970