Simultaneous Sb doping and formation of self-aligned TiSi2 by codeposition of Ti and Sb
- 1 April 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (7) , 3924-3928
- https://doi.org/10.1063/1.348451
Abstract
Thin Ti films containing Sb were deposited on silicon by electron‐beam evaporation. The films were annealed in three steps at different temperatures in order to achieve simultaneous Sb doping and self‐aligned TiSi2 formation. Sb behavior during the Ti silicide formation and silicide structures were investigated with Auger electron spectroscopy, transmission electron microscopy, and secondary ion mass spectroscopy. Shallow n+‐p junctions have been obtained by using a modified self‐aligned TiSi2 process.This publication has 11 references indexed in Scilit:
- Thermodynamic investigations of solid-state Si-metal interactions. I. Experimental and analytical studies of the Si-Ti binary systemJournal of Applied Physics, 1990
- Crystallization of amorphous Ti-Si alloy thin films: Microstructure and resistivityJournal of Applied Physics, 1989
- Diffusion of Sb, Ga, Ge, and (As) in TiSi2Journal of Applied Physics, 1988
- Self-aligned titanium silicide device technology by NH3 plasma assisted thermal annealingJournal of Vacuum Science & Technology B, 1987
- Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayersJournal of Applied Physics, 1987
- Junction leakage in titanium self-aligned silicide devicesApplied Physics Letters, 1986
- Boron, phosphorus, and arsenic diffusion in TiSi2Journal of Applied Physics, 1986
- Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide-semiconductor technologiesJournal of Vacuum Science & Technology B, 1985
- Self-aligned TiSi2 for bipolar applicationsJournal of Vacuum Science & Technology B, 1985
- Specific contact resistivity of TiSi2to P+and n+junctionsIEEE Electron Device Letters, 1985