A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth
- 1 September 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 34 (9) , 1225-1232
- https://doi.org/10.1109/4.782080
Abstract
This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO is based on a push-push oscillator topology, which employs InP HBT technology with peak f/sub T/'s and f/sub max/'s of 75 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 /spl Omega/. The VCO also obtains a tuning bandwidth of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1- and 10-MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO. The push-push VCO design approach demonstrated in this work enables higher VCO frequency operation, lower noise performance, and smaller size, which is attractive for millimeter-wave frequency source applications.Keywords
This publication has 9 references indexed in Scilit:
- High linearity monolithic broadband pseudomorphic spike-doped MESFET amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Low-noise, low DC power linear amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 44-GHz high IP3 InP-HBT amplifier with practical current reuse biasingIEEE Transactions on Microwave Theory and Techniques, 1998
- Intermodulation mechanism and linearization of AlGaAs/GaAs HBTsIEEE Transactions on Microwave Theory and Techniques, 1997
- The voltage-dependent IP3 performance of a 35-GHz InAlAs/InGaAs-InP HBT amplifierIEEE Microwave and Guided Wave Letters, 1997
- A Q-band monolithic linear amplifier using AlGaAs/GaAs HBT'sIEEE Microwave and Guided Wave Letters, 1996
- Ultra-low dc power GaAs HBT S- and C-band low noise amplifiers for portable wireless applicationsIEEE Transactions on Microwave Theory and Techniques, 1995
- Intermodulation in heterojunction bipolar transistorsIEEE Transactions on Microwave Theory and Techniques, 1992