Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures

This publication has 14 references indexed in Scilit:

• Measurement of the fundamental band gaps of a strained GaInAs layer
  Journal of Applied Physics, 1990
• Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties
  Journal of Vacuum Science & Technology B, 1990
• Mode of growth in LP-MOVPE deposition of GalnAs/lnP quantum wells
  Journal of Electronic Materials, 1990
• Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor-phase epitaxy with 0≤x≤1
  Journal of Applied Physics, 1990
• High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
  Electronics Letters, 1989
• Erratum: ‘‘Electronic structures of In1−xGaxAs-InP strained-layer quantum wells’’ [J. Appl. Phys. 6 5, 3096 (1989)]
  Journal of Applied Physics, 1989
• Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy
  Applied Physics Letters, 1989
• Type-I to type-II superlattice transition in strained layers of ${\mathrm{In}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As grown on InP
  Physical Review Letters, 1988
• Strained-layer superlattices: A brief review
  IEEE Journal of Quantum Electronics, 1986
• Band-structure determination of GaAs from hot-electron luminescence
  Physical Review B, 1986