Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate

29 September 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (20) , 1266-1267
https://doi.org/10.1049/el:19880862

Abstract

An n-channel SOI-MOSFET fabricated on a very thin (500 Å) SOI substrate exhibited no detectable drain-current overshoot for various gate turn-on pulses. The reason can be ascribed to the suppression of the floating substrate effect, brought about by the quick decay of excess holes.

Keywords

SOI-MOSFETS
ULTRATHIN SOI SUBSTRATE
FLOATING SUBSTRATE EFFECT
EXCESS HOLES
GATE TURN-ON PULSES
DRAIN-CURRENT OVERSHOOT
QUICK DECAY
500 A