Localisation of the exciton-polariton in disordered semiconductors

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Abstract
Using diagrammatic Green function methods the authors have shown that the criterion for localisation of the exciton-polariton in semiconductors containing randomly distributed metallic spheres can be satisfied. Multiple-scattering theory is used to describe the propagation of exciton-polaritons. In calculating the mean free path they use the average t-matrix approximation and Mie theory. The Drude model for the dielectric function of the metallic spheres is used in order to include the effects of scattering from the surface of the sphere. It is proposed that effects of the exciton-polariton localisation can be observed in optical absorption experiments.