Calculation of Bond Length in Ga1-xInxAs Ternary Semiconductors
- 1 April 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (4A) , L208
- https://doi.org/10.1143/jjap.23.l208
Abstract
A simple model for calculating the nearest neighbor bond length in ternary semiconductors is presented. Calculated bond lengths for Ga1-x In x As agree well with experimental data by EXAFS. The change in bond lengths for Ga0.5In0.5As is only 21%, compared with that calculated using the virtual-crystal approximation approach. Using this model, the change in bond length and bond angle for other ternary zincblend structure alloys can also be easily estimated without using EXAFS.Keywords
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