Silicon Carbide Electronic Materials and Devices

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Abstract
The development of SiC for electronic applications has been a subject of intense research for nearly 40 years. Much of this research is motivated by the extraordinary combination of physical properties possessed by SiC, especially in the development of SiC-based devices for specific high-temperature, high-power, or high-frequency applications that are not suitable for Si- or GaAs-based devices. During the early years of SiC research and development, a significant amount of good, fundamental research was performed, but the development of commercially available SiC-based devices was retarded by low-quality bulk materials and inadequate epitaxial processes. In the late 1980s, research at academic institutions, such as North Carolina State University, and industrial laboratories, such as Westinghouse (now Northrup-Grumman), Advanced Technology Materials, Inc. (ATMI), and Cree Research, Inc., coupled with the commercial offering of highquality SiC wafers from Cree, created an opportunity for further advancement. Improvements in epitaxial processes and device processing strategies were also realized during this time. Together these factors have enabled the fabrication of high-quality device structures and have generated increased research and funding activities in SiC electronic devices.

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