Calculating double-exponential diode model parametersfrom previously extracted single-exponential modelparameters
- 5 January 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (1) , 71-72
- https://doi.org/10.1049/el:19950030
Abstract
A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode's current-voltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode's single-exponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance.Keywords
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