Competition between Photocorrosion and Photooxidation of Redox Systems at n‐Type Semiconductor Electrodes

Abstract
Photocorrosion of the semiconductors MoSe2, WSe2 and GaP in contact with [Fe(CN)6]4− ‐solution has been investigated by following the change of the redox potential in a closed electrolysis cell filled with redox electrolyte. Comparison with the integrated photocurrent gives the fraction of corrosion. It was found that the fraction of corrosion at constant bias and constant [Fe(CN)6]4− concentration is independent on illumination intensity at MoSe2 and WSe2, but increases at GaP. It decreases with increasing concentration of [Fe(CN)6]4−. Two reaction sequences are derived which describe the influence of the light intensity and of the concentration of the redox species quantitatively.

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